MRFE6S9200HR3 - Motorola Semiconductor Products

MRFE6S9200HR3 RF Power FET

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt ba.

Features

• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRFE6S9200H Rev. 1, 12/2008 MRFE6S9200HR3 MRFE6S9200HSR3 880 MHz, 58 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRFE6S9200HR3 CASE 465C - 02, STYLE 1 NI - 880S MRFE6S9200HSR3 Table 1. Maximum Rat.