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MRFE6S9060NR1 |
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| Part Number | MRFE6S9060NR1 |
| Manufacturer | Freescale Semiconductor |
| Description | Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up ... |
| Features |
• Characterized with Series Equivalent Large - Signal Impedance Parameters • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Document Number: MRFE6S9060N Rev. 1, 10/2007 MRFE6S9060NR1 880 MHz, 14 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 1265- 09, STYLE 1 TO - 270 - 2 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage Gate - Source Voltage Maximum Operation Voltage Storage Temperature Range Case Operating Temperature Operating ... |
| Document |
 MRFE6S9060NR1 Data Sheet
PDF 629.53KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MRFE6S9045NR1 |
Freescale Semiconductor |
RF Power FET |
|
| 2 | MRFE6S9125NBR1 |
Freescale Semiconductor |
N-Channel Enhancement-Mode Lateral MOSFETs |
|
| 3 | MRFE6S9125NR1 |
Freescale Semiconductor |
N-Channel Enhancement-Mode Lateral MOSFETs |
|
| 4 | MRFE6S9130HR3 |
Freescale Semiconductor |
RF Power FET |
|
| 5 | MRFE6S9130HSR3 |
Freescale Semiconductor |
RF Power FET |
|