MRFE6S9045NR1 - Freescale Semiconductor

MRFE6S9045NR1 RF Power FET

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large - signal, common - source amplifier applications in 28 volt base st.

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Document Number: MRFE6S9045N Rev. 0, 10/2007 MRFE6S9045NR1 880 MHz, 10 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 1265- 09, STYLE 1 TO - 270 - 2 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage Gate - Source Voltage Maximum Operation Voltage Storage Temperature Range Case Operating Temperature Operating .