MRF555 NPN SILICON RF LOW POWER TRANSISTOR Datasheet

MRF555 NPN SILICON RF LOW POWER TRANSISTOR

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF555/D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) Efficiency 60% (Typ) • Cost Effective PowerMacr.

Features

L CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) V(BR)CEO 16 — — Vdc Collector
  –Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) V(BR)CES 36 — — Vdc Emitter
  –Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25°C) ICES — — 0.1 mAdc ON CHARACTERISTICS DC Current G.

The same part from a different manufacturer

MRF555 - Microsemi

Designed primarily for wideband large signal stages in the UHF frequency range. MRF555 Power Macro ABSOLUTE MAXIMUM R.

MRF555 - Advanced Semiconductor

The ASI MRF555 is designed for Wideband large signal stages in the UHF frequency range. FEATURES: • 12.5 V, 470 MHz. • .

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MRF555 - Motorola