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MRF555 |
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| Part Number | MRF555 |
| Manufacturer | Advanced Semiconductor |
| Description | The ASI MRF555 is designed for Wideband large signal stages in the UHF frequency range. FEATURES: • 12.5 V, 470 MHz. • POUT = 1.5 W • GP = 11 min. • η = 60 % (Typ) MAXIMUM RATINGS IC 500 mA VCBO ... |
| Features |
• 12.5 V, 470 MHz. • POUT = 1.5 W • GP = 11 min. • η = 60 % (Typ) MAXIMUM RATINGS IC 500 mA VCBO 30 V PDISS 3.0 W @ TC = 75 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 41.7 °C/W PACKAGE STYLE MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.45 5.21 .175 .205 B 1.91 2.54 .075 .100 C 0.84 0.99 .033 .039 D 2.46 2.64 .097 .104 E 8.84 9.73 .348 .383 F 0.20 0.31 .008 0.12 G 7.24 8.13 .285 .320 H 1.65 0.65 J 3.25 0.128 K 0.64 1.02 .025 0.40 1 = COLLECTOR 2 = EMITTER 3 = BASE 4 = EMITTER CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIO... |
| Document |
 MRF555 Data Sheet
PDF 63.10KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF553 |
Motorola |
NPN SILICON RF LOW POWER TRANSISTOR |
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| 2 | MRF553 |
ASI |
NPN SILICON RF TRANSISTOR |
|
| 3 | MRF553 |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 4 | MRF553 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 5 | MRF553G |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|