Designed primarily for wideband large signal stages in the VHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Total Device Dissipation @ TC = 75ºC Derate above 75ºC Value 16 36 4.0 500 3.0 40 Uni.
• Specified @ 12.5 V, 175 MHz Characteristics
• Output Power = 1.5 W
• Minimum Gain = 11.5 dB
• Efficiency 60% (Typ)
• Cost Effective PowerMacro Package
• Electroless Tin Plated Leads for Improved Solderability
Power Macro
DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
Total Device Dissipation @ TC = 75ºC Derate above 75ºC
Value 16 36 4.0 500
3.0 40
Unit V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRF553 |
Motorola |
NPN SILICON RF LOW POWER TRANSISTOR | |
2 | MRF553 |
ASI |
NPN SILICON RF TRANSISTOR | |
3 | MRF553 |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
4 | MRF553 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
5 | MRF555 |
Motorola |
NPN SILICON RF LOW POWER TRANSISTOR | |
6 | MRF555 |
Advanced Semiconductor |
NPN SILICON RF TRANSISTOR | |
7 | MRF555 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
8 | MRF557 |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
9 | MRF557G |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
10 | MRF559 |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
11 | MRF559 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
12 | MRF559 |
Motorola |
NPN SILICON HIGH FREQUENCY TRANSISTOR |