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MRF555 |
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| Part Number | MRF555 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF555/D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequen... |
| Features |
L CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 25 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector –Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) V(BR)CEO 16 — — Vdc Collector –Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) V(BR)CES 36 — — Vdc Emitter –Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25°C) ICES — — 0.1 mAdc ON CHARACTERISTICS DC Current G... |
| Document |
 MRF555 Data Sheet
PDF 98.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF553 |
Motorola |
NPN SILICON RF LOW POWER TRANSISTOR |
|
| 2 | MRF553 |
ASI |
NPN SILICON RF TRANSISTOR |
|
| 3 | MRF553 |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 4 | MRF553 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 5 | MRF553G |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|