Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Designed primarily for wideband large signal stages in the UHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Value 16 30 3.0 500 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 75°C Derate a.
• Specified @ 12.5 V, 870 MHz Characteristics
• Output Power = 1.5 W
• Minimum Gain = 8 dB
• Efficiency 60% (Typ)
• Cost Effective PowerMacro Package
• Electroless Tin Plated Leads for Improved Solderability
MRF557 MRF557G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
Power Macro
DESCRIPTION: Designed primarily for wideband large signal stages in
the UHF frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Value 16 30 3.0 500
Unit Vdc Vdc Vdc mA
Th.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF557 |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 2 | MRF553 |
Motorola |
NPN SILICON RF LOW POWER TRANSISTOR |
|
| 3 | MRF553 |
ASI |
NPN SILICON RF TRANSISTOR |
|
| 4 | MRF553 |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 5 | MRF553 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 6 | MRF553G |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 7 | MRF555 |
Motorola |
NPN SILICON RF LOW POWER TRANSISTOR |
|
| 8 | MRF555 |
Advanced Semiconductor |
NPN SILICON RF TRANSISTOR |
|
| 9 | MRF555 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 10 | MRF559 |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 11 | MRF559 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 12 | MRF559 |
Motorola |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
|