MRF166 - Motorola

MRF166 MOSFET BROADBAND RF POWER FETs

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166/D The RF MOSFET Line RF Power Field Effect Transistors • Low Crss — 4.5 pF @ VDS = 28 V N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500 MHz. • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 d.

Features

Gate
  –Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate Above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ± 40 4.0 70 0.4
  – 65 to 150 200 Unit Vdc Vdc Adc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.5 Unit °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1994 .