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MRF166 |
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| Part Number | MRF166 |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166/D The RF MOSFET Line RF Power Field Effect Transistors • Low Crss — 4.5 pF @ VDS = 28 V N–Channel Enhancement Mode MOSFETs Desi... |
| Features |
Gate –Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate Above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ± 40 4.0 70 0.4 – 65 to 150 200 Unit Vdc Vdc Adc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.5 Unit °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1994 ... |
| Document |
 MRF166 Data Sheet
PDF 154.80KB |
| Distributor | Stock | Price | Buy |
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