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SEMICONDUCTOR TECHNICAL DATA Order this document by MRF160/D The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET • Guaranteed 28 Volt, 500 MHz Performance Output Power = 4.0 Watts Gain = 16 dB (Min) Efficiency = 55% (Typ) • Excellent Thermal Stability, Ideally Suited for Class A Operation • Facilitates Manual Gain Control, A.
0.14
– 65 to +150 200 Unit Vdc Vdc Vdc ADC Watts W/°C °C °C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case RθJC 7.2 °C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 5
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain
–Source Breakdown Voltage (VDS = 0 Vdc, VGS = 0 Vdc, ID = 1.0 mA) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 V) Gate
–Source Leakage Current (VGS = 20.
MRF160 - Motorola
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF160/D The RF MOSFET Line Power Field Effect Transist.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF16006 |
Tyco Electronics |
RF POWER TRANSISTOR |
|
| 2 | MRF16006 |
Motorola |
RF POWER TRANSISTOR |
|
| 3 | MRF16030 |
Tyco Electronics |
RF POWER TRANSISTOR |
|
| 4 | MRF16030 |
Motorola |
RF POWER TRANSISTOR |
|
| 5 | MRF161 |
Advanced Semiconductor |
SILICON N-CHANNEL RF POWER MOSFET |
|
| 6 | MRF162 |
Motorola |
RF Power FET |
|
| 7 | MRF166 |
Motorola |
MOSFET BROADBAND RF POWER FETs |
|
| 8 | MRF166C |
Tyco Electronics |
MOSFET BROADBAND RF POWER FETs |
|
| 9 | MRF166C |
Motorola |
MOSFET BROADBAND RF POWER FETs |
|
| 10 | MRF166C |
MA-COM |
The RF MOSFET |
|
| 11 | MRF166W |
Tyco Electronics |
TMOS BROADBAND RF POWER FET |
|
| 12 | MRF166W |
Motorola |
TMOS BROADBAND RF POWER FET |
|