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SEMICONDUCTOR TECHNICAL DATA Order this document by MRF16006/D The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 6 Watts Minimum Gain = 7.4 dB, @ 6 Watts Minimum Efficiency .
istance — Junction to Case (1) (2) RθJC 6.8 °C/W (1) Thermal measurement performed using CW RF operating condition. (2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 2
1
MRF16006
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector
–Emitter Breakdown Voltage (IC = 40 mAdc, VBE = 0) Collector
–Base Breakdown Voltage (IC = 40 mAdc, IE = 0) Emitter
–Base Breakdown Voltage (IE = 2.5 mAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, VBE = 0) V(BR)CES.
MRF16006 - Motorola
MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF16006/D NPN Silicon MRF16006 6.0 WATTS, .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF160 |
Tyco Electronics |
MOSFET BROADBAND RF POWER FET |
|
| 2 | MRF160 |
Motorola |
MOSFET BROADBAND RF POWER FET |
|
| 3 | MRF16030 |
Tyco Electronics |
RF POWER TRANSISTOR |
|
| 4 | MRF16030 |
Motorola |
RF POWER TRANSISTOR |
|
| 5 | MRF161 |
Advanced Semiconductor |
SILICON N-CHANNEL RF POWER MOSFET |
|
| 6 | MRF162 |
Motorola |
RF Power FET |
|
| 7 | MRF166 |
Motorola |
MOSFET BROADBAND RF POWER FETs |
|
| 8 | MRF166C |
Tyco Electronics |
MOSFET BROADBAND RF POWER FETs |
|
| 9 | MRF166C |
Motorola |
MOSFET BROADBAND RF POWER FETs |
|
| 10 | MRF166C |
MA-COM |
The RF MOSFET |
|
| 11 | MRF166W |
Tyco Electronics |
TMOS BROADBAND RF POWER FET |
|
| 12 | MRF166W |
Motorola |
TMOS BROADBAND RF POWER FET |
|