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SEMICONDUCTOR TECHNICAL DATA Order this document by MRF16030/D The RF Line NPN Silicon MRF16030 30 WATTS, 1.6 GHz RF POWER TRANSISTOR NPN SILICON RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power =.
l Resistance — Junction to Case (1) (2) RθJC 1.7 °C/W (1) Thermal measurement performed using CW RF operating condition. (2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 3
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector
–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector
–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter
–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, VBE = 0) V(BR)CES 55 .
MRF16030 - Motorola
MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF16030/D NPN Silicon MRF16030 30 WATTS, 1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF160 |
Tyco Electronics |
MOSFET BROADBAND RF POWER FET |
|
| 2 | MRF160 |
Motorola |
MOSFET BROADBAND RF POWER FET |
|
| 3 | MRF16006 |
Tyco Electronics |
RF POWER TRANSISTOR |
|
| 4 | MRF16006 |
Motorola |
RF POWER TRANSISTOR |
|
| 5 | MRF161 |
Advanced Semiconductor |
SILICON N-CHANNEL RF POWER MOSFET |
|
| 6 | MRF162 |
Motorola |
RF Power FET |
|
| 7 | MRF166 |
Motorola |
MOSFET BROADBAND RF POWER FETs |
|
| 8 | MRF166C |
Tyco Electronics |
MOSFET BROADBAND RF POWER FETs |
|
| 9 | MRF166C |
Motorola |
MOSFET BROADBAND RF POWER FETs |
|
| 10 | MRF166C |
MA-COM |
The RF MOSFET |
|
| 11 | MRF166W |
Tyco Electronics |
TMOS BROADBAND RF POWER FET |
|
| 12 | MRF166W |
Motorola |
TMOS BROADBAND RF POWER FET |
|