MRF166W - Tyco Electronics

MRF166W TMOS BROADBAND RF POWER FET

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166W/D The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET • Push–Pull Configuration Reduces Even Numbered Harmonics • Guaranteed Performance at 500 MHz, 28 Vdc Output Power = 40 Watts Gain = 14 dB Efficiency = 50% • Typical Performance at 175 MHz, 28 Vdc Output Power = 4.

Features

C = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ± 20 8.0 175 1.0
  – 65 to +150 200 Unit Vdc Vdc Adc ADC Watts °C/W °C °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case RθJC 1.0 °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain
  –Source Breakd.