MMVL809T1 - LRC

MMVL809T1 Silicon Tuning Diode

www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode MMVL809T1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. 4.5 – 6.1 pF VOLTAGE VARIABLE CAPACITANCE DIODE 1 • Controlled and Uniform Tuning Ratio • Surface Mount Package • Avail.

Features

BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 15 Vdc) Symbol V(BR)R IR Min 20 — Typ — — Max — 50 Unit Vdc nAdc Ct, Diode Capacitance Q, Figure of Merit VR = 2.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc pF f = 500 MHz Device Min Nom Max Min MMVL809T1 4.5 5.3 6.1 75 1. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc. CR, Capacitance Ratio C3/C8 f = 1.0 MHz(1) Min Max 1.8 2.6 MMVL809T1
  –1/2 LESHAN RADIO COMPANY, LTD. MMVL809T1 TYPICAL CHARACTERISTICS 10 9 CT , DIODE CAPACITANCE (pF) 1000 Q, FIGURE OF MERIT 8 7 6 5 4 3 2 1 0 0.5 1 2 3 4 5 8 10 15 .