MMVL3102T1 - LRC

MMVL3102T1 Silicon Tuning Diode

www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode MMVL3102T1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. 22 pF (Nominal) 30 VOLTS VOLTAGEVARIABLE CAPACITANCEDIODE 1 • High Q with Guaranteed Mini.

Features

ess otherwise noted) Characteristic Reverse BreakdownVoltage (I R = 10 µAdc) Reverse Voltage Leakage Current Symbol V(BR)R Min 30 Typ — Max — Unit Vdc IR TCC — — — 300 0.1 — µAdc ppm/°C (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Device MMVL3102T1 Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Min Nom Max 20 22 25 Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz Min 200 CR, Capacitance Ratio C3/C25 f = 1.0 MHz Min Max 4.5 4.8 MMVL3102T1
  –1/2 LESHAN RADIO COMPANY, LTD. MMVL3102T1 TYPICAL CHARACTERISTICS 40 CT , DIODE CAPACITANCE (pF) .