MMVL109T1 - LRC

MMVL109T1 Silicon Epicap Diode

www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Silicon Epicap Diode MMVL109T1 Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods. 26–32 pF VOLTAGEVARIABLE CAPACITANCE DIODES 1 • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning.

Features

racteristic Reverse BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current Symbol V(BR)R Min 30 Typ — Max — Unit Vdc IR TCC — — — 300 0.1 — µAdc ppm/°C (VR = 25 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance Q, Figure of Merit VR = 3.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc pF f = 50 MHz Device Min Nom Max Min MMVL109T1 26 29 32 200 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc. CR, Capacitance Ratio C3/C25 f = 1.0 MHz(Note 1) Min Max 5.0 6.5 MMVL109T1
  –1/2 LESHAN RADIO COMPANY, LTD. MMVL109T1 TYPICAL CHA.