MMVL105GT1 - ON Semiconductor

MMVL105GT1 VOLTAGE VARIABLE CAPACITANCE DIODE

www.DataSheet4U.com MMVL105GT1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. • Controlled and Uniform Tuning Ratio • Device Marking: 4E http://onsemi.com 30 VOLT VOLTAGE VARIA.

Features

nts Industries, LLC, 2000 1 January, 2000
  – Rev. 1 Publication Order Number: MMVL105GT1/D MMVL105GT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 28 Vdc) CT VR = 25 Vdc, f = 1.0 MHz pF Min MMVL105GT1 1.5 Max 2.8 Symbol Min V(BR)R IR Typ 30 — Max — 50 Unit Vdc nAdc Device Type Q VR = 3.0 Vdc f = 50 MHz Typ 250 Min 4.0 CR C3/C25 f = 1.0 MHz Max 6.5 TYPICAL CHARACTERISTICS 20 18 CT , DIODE CAPACITANCE (pF) Q, FIGURE OF MERIT 16 14 12 10 8.0 6.0 4.0 2.0 0 0.3 0.5 1.0 2.0 3.0 5.0 1.