Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
MMVL809T1 |
Click to view a larger image
| Part Number | MMVL809T1 |
| Manufacturer | LRC |
| Description | www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode MMVL809T1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in re... |
| Features |
BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 15 Vdc) Symbol V(BR)R IR Min 20 — Typ — — Max — 50 Unit Vdc nAdc
Ct, Diode Capacitance Q, Figure of Merit VR = 2.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc pF f = 500 MHz Device Min Nom Max Min MMVL809T1 4.5 5.3 6.1 75 1. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc.
CR, Capacitance Ratio C3/C8 f = 1.0 MHz(1) Min Max 1.8 2.6
MMVL809T1 –1/2 LESHAN RADIO COMPANY, LTD. MMVL809T1 TYPICAL CHARACTERISTICS 10 9 CT , DIODE CAPACITANCE (pF) 1000 Q, FIGURE OF MERIT 8 7 6 5 4 3 2 1 0 0.5 1 2 3 4 5 8 10 15 ... |
| Document |
 MMVL809T1 Data Sheet
PDF 67.15KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MMVL809T1 |
ON Semiconductor |
Silicon Tuning Diode |
|
| 2 | MMVL105GT1 |
ON Semiconductor |
VOLTAGE VARIABLE CAPACITANCE DIODE |
|
| 3 | MMVL105GT1 |
LRC |
Silicon Tuning Diode |
|
| 4 | MMVL109T1 |
LRC |
Silicon Epicap Diode |
|
| 5 | MMVL109T1 |
ON Semiconductor |
Silicon Epicap Diodes |
|