MMVL2101T1 - LRC

MMVL2101T1 Silicon Tuning Diode

www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode These devices are designed in the popular Plastic Surface Mount Package for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical tuning methods. MMVL2101T1 30 VOLTS V.

Features

ACTERISTICS RθJA TJ, Tstg
*FR
  –4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current Symbol V(BR)R Min 30 Typ — Max — Unit Vdc IR TCC — — — 280 0.1 — µAdc ppm/°C (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Device MMVL2101T1 Ct, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Min Nom Max 6.1 6.8 7.5450 Q, Figure of Merit VR = 4.0 Vdc f = 50 MHz Min 2.5 TR, Tuning Ratio C2/C30 f = 1.0 MHz Min Max 2.7 3.2 PARAMETER TEST METHODS .