MMVL409T1 - LRC

MMVL409T1 Silicon Tuning Diode

www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode MMVL409T1 These devices are designed for general frequency control and tuning applications. They provide solid–state reliability in replacement of mechanical tuning methods. VOLTAGEVARIABLE CAPACITANCEDIODE 1 • High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Unif.

Features

eristic Reverse BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 15 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 20 — — Typ — — 300 Max — 0.1 — Unit Vdc µAdc ppm/°C Ct, Diode Capacitance Q, Figure of Merit VR = 3.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc pF f = 50 MHz Device Min Nom Max Min MMVL409T1 26 29 32 200 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc. CR, Capacitance Ratio C3/C8 f = 1.0 MHz(1) Min Max 1.5 1.9 MMVL409T1
  –1/2 LESHAN RADIO COMPANY, LTD. MMVL409T1 TYPICAL CHARACTERISTICS CT,.