MMVL409T1 |
Part Number | MMVL409T1 |
Manufacturer | LRC |
Description | www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode MMVL409T1 These devices are designed for general frequency control and tuning applications. They provide solid–state reliability i... |
Features |
eristic Reverse BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 15 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 20 — — Typ — — 300 Max — 0.1 — Unit Vdc µAdc ppm/°C
Ct, Diode Capacitance Q, Figure of Merit VR = 3.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc pF f = 50 MHz Device Min Nom Max Min MMVL409T1 26 29 32 200 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc.
CR, Capacitance Ratio C3/C8 f = 1.0 MHz(1) Min Max 1.5 1.9
MMVL409T1 –1/2 LESHAN RADIO COMPANY, LTD. MMVL409T1 TYPICAL CHARACTERISTICS CT,... |
Document |
MMVL409T1 Data Sheet
PDF 116.13KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMVL409T1 |
ON Semiconductor |
Silicon Tuning Diode | |
2 | MMVL105GT1 |
ON Semiconductor |
VOLTAGE VARIABLE CAPACITANCE DIODE | |
3 | MMVL105GT1 |
LRC |
Silicon Tuning Diode | |
4 | MMVL109T1 |
LRC |
Silicon Epicap Diode | |
5 | MMVL109T1 |
ON Semiconductor |
Silicon Epicap Diodes |