The ME70N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (TO-220) Top View FEATURES ● RDS(ON)≦17mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Ex.
● RDS(ON)≦17mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management
● DC/DC Converter
● Load Switch
* The Ordering Information: ME70N10T (Pb-free) ME70N10T-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25℃ TC=70℃
Pulsed Drain Current
Maximum Power Dissipation
TC=25℃ TC=70℃
Operating Junction and Storage Temperature Range
Thermal Resistance-Junction to Case
*.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ME70N10T-G |
Matsuki |
N- Channel 100-V (D-S) MOSFET | |
2 | ME70N03 |
Matsuki |
N-Channel Enhancement Mode MOSFET | |
3 | ME70N03A |
Matsuki |
25V N-Channel Enhancement Mode MOSFET | |
4 | ME70N03S |
Matsuki |
30V N-Channel Enhancement Mode MOSFET | |
5 | ME70N03S-G |
Matsuki |
30V N-Channel Enhancement Mode MOSFET | |
6 | ME70N06T |
Matsuki |
N-Channel 60-V (D-S) MOSFET | |
7 | ME70N06T-G |
Matsuki |
N-Channel 60-V (D-S) MOSFET | |
8 | ME700802 |
Powerex Powers |
Three-Phase Diode Bridge Modules (20 Amperes/800 Volts) | |
9 | ME700803 |
Powerex Powers |
Three-Phase Diode Bridge Modules (30 Amperes/800 Volts) | |
10 | ME701202 |
Powerex Powers |
Three-Phase Diode Bridge Modules (20 Amperes/1200-1600 Volts) | |
11 | ME701203 |
Powerex Powers |
Three-Phase Diode Bridge Modules (30 Amperes/1200-1600 Volts) | |
12 | ME701602 |
Powerex Powers |
Three-Phase Diode Bridge Modules (20 Amperes/1200-1600 Volts) |