The ME70N03S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are FEATURES ● RDS(ON)≦6.6mΩ@VGS=10V ● RDS(ON)≦11mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(O.
● RDS(ON)≦6.6mΩ@VGS=10V
● RDS(ON)≦11mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
particularly suited for low voltage application such as cellular
capability
phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(TO-252) Top View
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
e Ord.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ME70N03S |
Matsuki |
30V N-Channel Enhancement Mode MOSFET | |
2 | ME70N03 |
Matsuki |
N-Channel Enhancement Mode MOSFET | |
3 | ME70N03A |
Matsuki |
25V N-Channel Enhancement Mode MOSFET | |
4 | ME70N06T |
Matsuki |
N-Channel 60-V (D-S) MOSFET | |
5 | ME70N06T-G |
Matsuki |
N-Channel 60-V (D-S) MOSFET | |
6 | ME70N10T |
Matsuki |
N- Channel 100-V (D-S) MOSFET | |
7 | ME70N10T-G |
Matsuki |
N- Channel 100-V (D-S) MOSFET | |
8 | ME700802 |
Powerex Powers |
Three-Phase Diode Bridge Modules (20 Amperes/800 Volts) | |
9 | ME700803 |
Powerex Powers |
Three-Phase Diode Bridge Modules (30 Amperes/800 Volts) | |
10 | ME701202 |
Powerex Powers |
Three-Phase Diode Bridge Modules (20 Amperes/1200-1600 Volts) | |
11 | ME701203 |
Powerex Powers |
Three-Phase Diode Bridge Modules (30 Amperes/1200-1600 Volts) | |
12 | ME701602 |
Powerex Powers |
Three-Phase Diode Bridge Modules (20 Amperes/1200-1600 Volts) |