25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@45A = 6m RDS(ON), [email protected],Ids@30A =9m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current ME70N03A(Pb-Free) APPLICATIONS Motherboard (V-Co.
Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current ME70N03A(Pb-Free) APPLICATIONS Motherboard (V-Core) Portable Equipment DC/DC Converter Load Switch LCD Display inverter IPC PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA=25 TA=70 Operating Junction and Storage Temperatur.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ME70N03 |
Matsuki |
N-Channel Enhancement Mode MOSFET | |
2 | ME70N03S |
Matsuki |
30V N-Channel Enhancement Mode MOSFET | |
3 | ME70N03S-G |
Matsuki |
30V N-Channel Enhancement Mode MOSFET | |
4 | ME70N06T |
Matsuki |
N-Channel 60-V (D-S) MOSFET | |
5 | ME70N06T-G |
Matsuki |
N-Channel 60-V (D-S) MOSFET | |
6 | ME70N10T |
Matsuki |
N- Channel 100-V (D-S) MOSFET | |
7 | ME70N10T-G |
Matsuki |
N- Channel 100-V (D-S) MOSFET | |
8 | ME700802 |
Powerex Powers |
Three-Phase Diode Bridge Modules (20 Amperes/800 Volts) | |
9 | ME700803 |
Powerex Powers |
Three-Phase Diode Bridge Modules (30 Amperes/800 Volts) | |
10 | ME701202 |
Powerex Powers |
Three-Phase Diode Bridge Modules (20 Amperes/1200-1600 Volts) | |
11 | ME701203 |
Powerex Powers |
Three-Phase Diode Bridge Modules (30 Amperes/1200-1600 Volts) | |
12 | ME701602 |
Powerex Powers |
Three-Phase Diode Bridge Modules (20 Amperes/1200-1600 Volts) |