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The ME70N06T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management an.
● RDS(ON)≦12mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD Display inverter
* The Ordering Information: ME70N06/ME70N06T-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | ME70N06T |
Matsuki |
N-Channel 60-V (D-S) MOSFET |
|
| 2 | ME70N03 |
Matsuki |
N-Channel Enhancement Mode MOSFET |
|
| 3 | ME70N03A |
Matsuki |
25V N-Channel Enhancement Mode MOSFET |
|
| 4 | ME70N03S |
Matsuki |
30V N-Channel Enhancement Mode MOSFET |
|
| 5 | ME70N03S-G |
Matsuki |
30V N-Channel Enhancement Mode MOSFET |
|
| 6 | ME70N10T |
Matsuki |
N- Channel 100-V (D-S) MOSFET |
|
| 7 | ME70N10T-G |
Matsuki |
N- Channel 100-V (D-S) MOSFET |
|
| 8 | ME700802 |
Powerex Powers |
Three-Phase Diode Bridge Modules (20 Amperes/800 Volts) |
|
| 9 | ME700803 |
Powerex Powers |
Three-Phase Diode Bridge Modules (30 Amperes/800 Volts) |
|
| 10 | ME701202 |
Powerex Powers |
Three-Phase Diode Bridge Modules (20 Amperes/1200-1600 Volts) |
|
| 11 | ME701203 |
Powerex Powers |
Three-Phase Diode Bridge Modules (30 Amperes/1200-1600 Volts) |
|
| 12 | ME701602 |
Powerex Powers |
Three-Phase Diode Bridge Modules (20 Amperes/1200-1600 Volts) |
|