ME70N03S - Matsuki

ME70N03S 30V N-Channel Enhancement Mode MOSFET

The ME70N03S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are FEATURES ● RDS(ON)≦6.6mΩ@VGS=10V ● RDS(ON)≦11mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(O.

Features

● RDS(ON)≦6.6mΩ@VGS=10V
● RDS(ON)≦11mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current particularly suited for low voltage application such as cellular capability phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TO-252) Top View APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC e Ord.