ME70N10T-G - Matsuki

ME70N10T-G N- Channel 100-V (D-S) MOSFET

The ME70N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (TO-220) Top View FEATURES ● RDS(ON)≦17mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Ex.

Features

● RDS(ON)≦17mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management
● DC/DC Converter
● Load Switch
* The Ordering Information: ME70N10T (Pb-free) ME70N10T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ Operating Junction and Storage Temperature Range Thermal Resistance-Junction to Case
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