The ME2345A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and .
● RDS(ON) ≦68mΩ@VGS=-10V
● RDS(ON) ≦80mΩ@VGS=-4.5V
● RDS(ON) ≦100mΩ@VGS=-2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
● DSC
e Ordering Information: ME2345A (Pb-free)
ME2345A-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Tempera.
ME2345A ME2345A-VB Datasheet P-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ME2345 |
Matsuki |
P-Channel Enhancement Mode Mosfet | |
2 | ME2345-G |
Matsuki |
P-Channel Enhancement Mode Mosfet | |
3 | ME2345A-G |
Matsuki |
P-Channel 30V (D-S) MOSFET | |
4 | ME2345AS |
Matsuki |
P-Channel 30V (D-S) MOSFET | |
5 | ME2345AS-G |
Matsuki |
P-Channel 30V (D-S) MOSFET | |
6 | ME2347 |
Matsuki |
P-Channel Enhancement Mode Mosfet | |
7 | ME2347-G |
Matsuki |
P-Channel Enhancement Mode Mosfet | |
8 | ME2301 |
Matsuki |
P-Channel Enhancement Mode Mosfet | |
9 | ME2301-G |
Matsuki |
P-Channel Enhancement Mode Mosfet | |
10 | ME2301A |
Matsuki |
P-Channel 20V (D-S) MOSFET | |
11 | ME2301A-G |
Matsuki |
P-Channel 20V (D-S) MOSFET | |
12 | ME2301DC |
Matsuki |
P-Channel 20V (D-S) MOSFET |