The ME2301A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and o.
● RDS(ON) ≦75mΩ@VGS=-4.5V
● RDS(ON) ≦95mΩ@VGS=-2.5V
● RDS(ON) ≦130mΩ@VGS=-1.8V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
● DSC
(SOT-23) Top View
* The Ordering Information: ME2301A (Pb-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ME2301 |
Matsuki |
P-Channel Enhancement Mode Mosfet | |
2 | ME2301-G |
Matsuki |
P-Channel Enhancement Mode Mosfet | |
3 | ME2301A-G |
Matsuki |
P-Channel 20V (D-S) MOSFET | |
4 | ME2301DC |
Matsuki |
P-Channel 20V (D-S) MOSFET | |
5 | ME2301DC-G |
Matsuki |
P-Channel 20V (D-S) MOSFET | |
6 | ME2301GC |
Matsuki |
P-Channel 20V (D-S) MOSFET | |
7 | ME2301GC-G |
Matsuki |
P-Channel 20V (D-S) MOSFET | |
8 | ME2302 |
Matsuki |
N-Channel 20V (D-S) MOSFET | |
9 | ME2302-G |
Matsuki |
N-Channel 20V (D-S) MOSFET | |
10 | ME2302D |
Matsuki |
N-Channel 20V (D-S) MOSFET | |
11 | ME2302D-G |
Matsuki |
N-Channel 20V (D-S) MOSFET | |
12 | ME2303 |
Matsuki |
P-Channel 30V (D-S) MOSFET |