The ME2301DC is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and.
RDS(ON) 110mΩ@VGS=-4.5V RDS(ON) 150mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON) APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System Load Switch DSC PIN CONFIGURATION (SOT-23) Top View Ordering Information: ME2301DC (Pb-free) ME2301DC-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Sourc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ME2301DC-G |
Matsuki |
P-Channel 20V (D-S) MOSFET | |
2 | ME2301 |
Matsuki |
P-Channel Enhancement Mode Mosfet | |
3 | ME2301-G |
Matsuki |
P-Channel Enhancement Mode Mosfet | |
4 | ME2301A |
Matsuki |
P-Channel 20V (D-S) MOSFET | |
5 | ME2301A-G |
Matsuki |
P-Channel 20V (D-S) MOSFET | |
6 | ME2301GC |
Matsuki |
P-Channel 20V (D-S) MOSFET | |
7 | ME2301GC-G |
Matsuki |
P-Channel 20V (D-S) MOSFET | |
8 | ME2302 |
Matsuki |
N-Channel 20V (D-S) MOSFET | |
9 | ME2302-G |
Matsuki |
N-Channel 20V (D-S) MOSFET | |
10 | ME2302D |
Matsuki |
N-Channel 20V (D-S) MOSFET | |
11 | ME2302D-G |
Matsuki |
N-Channel 20V (D-S) MOSFET | |
12 | ME2303 |
Matsuki |
P-Channel 30V (D-S) MOSFET |