ME2301A-G - Matsuki

ME2301A-G P-Channel 20V (D-S) MOSFET

The ME2301A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and o.

Features

● RDS(ON) ≦75mΩ@VGS=-4.5V
● RDS(ON) ≦95mΩ@VGS=-2.5V
● RDS(ON) ≦130mΩ@VGS=-1.8V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
● DSC (SOT-23) Top View
* The Ordering Information: ME2301A (Pb-.