ME2301 - Matsuki

ME2301 P-Channel Enhancement Mode Mosfet

The ME2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and o.

Features

● RDS(ON) ≦110mΩ@VGS=-4.5V
● RDS(ON) ≦150mΩ@VGS=-2.5V
● Super high density cell design for extremely low RDS(ON) APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
● DSC PIN CONFIGURATION (SOT-23) Top View e Ordering Information: ME2301 (Pb-free) ME2301-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-.