ME2345-G - Matsuki

ME2345-G P-Channel Enhancement Mode Mosfet

The ME2345 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and o.

Features

● RDS(ON) ≦65mΩ@VGS=-10V
● RDS(ON) ≦75mΩ@VGS=-4.5V
● RDS(ON) ≦105mΩ@VGS=-2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
● DSC e Ordering Information: ME2345 (Pb-free) ME2345-G (Green product-Halogen free) (Green Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(Tj=150℃)
* Pulsed Drain Current Maximum Power Dissipation
* Operating J.