MDF18N50B - MagnaChip

MDF18N50B N-Channel MOSFET

The MDP/F18N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F18N50B is suitable device for SMPS, HID and general purpose applications. Features  VDS = 500V  ID = 18.0A  RDS(ON) ≤ 0.27Ω @VGS = 10V @VGS = 10V Applications  Power Supply  PFC  Ballast G D S T.

Features

 VDS = 500V
 ID = 18.0A
 RDS(ON) ≤ 0.27Ω @VGS = 10V @VGS = 10V Applications
 Power Supply
 PFC
 Ballast G D S TO-220 MDP Series GD S TO-220F MDF Series Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Therma.