The MDF10N65B MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. MDF10N65B is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 650V ID = 10.0A RDS(ON) ≤ 1.0Ω @ VGS = 10V @ VGS = 10V Applications Pow.
VDS = 650V ID = 10.0A RDS(ON) ≤ 1.0Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
TO-220F MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Thermal Characteristics
Characteristics Therma.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MDF10N60B |
MagnaChip |
N-Channel MOSFET | |
2 | MDF10N60G |
MagnaChip |
N-Channel MOSFET | |
3 | MDF10N60GTH |
INCHANGE |
N-Channel MOSFET | |
4 | MDF10N055TH |
MagnaChip |
N-channel MOSFET | |
5 | MDF10N50 |
MagnaChip |
N-Channel MOSFET | |
6 | MDF10 |
MIC |
SURFACE MOUNT BRIDGE | |
7 | MDF11N60 |
MagnaChip |
N-Channel MOSFET | |
8 | MDF11N65B |
MagnaChip |
N-Channel MOSFET | |
9 | MDF12-1416P |
Hirose Electric |
Crimping Contact Directly Mounted on Board | |
10 | MDF12-1416PC |
Hirose Electric |
Crimping Contact Directly Mounted on Board | |
11 | MDF12-1416PCF |
Hirose Electric |
Crimping Contact Directly Mounted on Board | |
12 | MDF12-1822P |
Hirose Electric |
Crimping Contact Directly Mounted on Board |