The MDF11N60 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF11N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V VDS = 660V ID = 11A RDS(ON) ≤ 0.55Ω Applications @ Tjmax @ VGS = 10V @ VGS = 10V Powe.
VDS = 600V VDS = 660V ID = 11A RDS(ON) ≤ 0.55Ω Applications @ Tjmax @ VGS = 10V @ VGS = 10V Power Supply PFC High Current, High Speed Switching GDS Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Characteristics Continuous Drain Current (※ ) Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MDF11N65B |
MagnaChip |
N-Channel MOSFET | |
2 | MDF10 |
MIC |
SURFACE MOUNT BRIDGE | |
3 | MDF10N055TH |
MagnaChip |
N-channel MOSFET | |
4 | MDF10N50 |
MagnaChip |
N-Channel MOSFET | |
5 | MDF10N60B |
MagnaChip |
N-Channel MOSFET | |
6 | MDF10N60G |
MagnaChip |
N-Channel MOSFET | |
7 | MDF10N60GTH |
INCHANGE |
N-Channel MOSFET | |
8 | MDF10N65B |
MagnaChip |
N-Channel MOSFET | |
9 | MDF12-1416P |
Hirose Electric |
Crimping Contact Directly Mounted on Board | |
10 | MDF12-1416PC |
Hirose Electric |
Crimping Contact Directly Mounted on Board | |
11 | MDF12-1416PCF |
Hirose Electric |
Crimping Contact Directly Mounted on Board | |
12 | MDF12-1822P |
Hirose Electric |
Crimping Contact Directly Mounted on Board |