MDF10N50 - MagnaChip

MDF10N50 N-Channel MOSFET

The MDF10N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF10N50 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V ID = 10.0A RDS(ON) ≤ 0.75Ω @ VGS = 10V @ VGS = 10V Applications Power Supply HID Lighting D G .

Features

VDS = 500V ID = 10.0A RDS(ON) ≤ 0.75Ω @ VGS = 10V @ VGS = 10V Applications Power Supply HID Lighting D G DS Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) G S TC=25oC TC=100oC TC=25oC Derate above 25.