MDF18N50 - MagnaChip

MDF18N50 N-Channel MOSFET

The MDF18N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF18N50 is suitable device for SMPS, high speed switching and general purpose applications. Features  VDS = 500V  VDS = 550V  ID = 18A  RDS(ON) ≤ 0.27Ω Applications @ Tjmax @VGS = 10V @VGS = 10V  Power .

Features

 VDS = 500V  VDS = 550V  ID = 18A  RDS(ON) ≤ 0.27Ω Applications @ Tjmax @VGS = 10V @VGS = 10V  Power Supply  PFC  High Current, High Speed Switching D GDS Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Characteristics Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature G S TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VDSS @ Tjmax VGSS ID I.