MDF10N60GTH - INCHANGE

MDF10N60GTH N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor MDF10N60GTH ·FEATURES ·With TO-220 packaging ·Low switching loss ·Ultra low gate charge ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·AC-DC converters ·LED lighting ·Uninterruptible power .

Features

·With TO-220 packaging
·Low switching loss
·Ultra low gate charge
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operationz
·APPLICATIONS
·Switching applications
·AC-DC converters
·LED lighting
·Uninterruptible power supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 10 6.3 40 PD Total Dissipation 156 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature .