M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Features M58WRxxxKT/B - 32Mb & 64Mb, 1.8V, x16 Multi Bank Burst, Flash M58WR032KT, M58WR064KT, M58WR032KB, M58WR064KB Features • Supply voltage – VDD = 1.7V to 2V for PROGRAM, ERASE and READ – VDDQ = 1.7V to 2V for I/O buffers – VPP = 9V for fast program • SYCHRONOUS/ASYCHRONOUS READ – SYCHRONOUS .
M58WRxxxKT/B - 32Mb & 64Mb, 1.8V, x16 Multi Bank Burst, Flash
M58WR032KT, M58WR064KT,
M58WR032KB, M58WR064KB
Features
• Supply voltage
– VDD = 1.7V to 2V for PROGRAM, ERASE and READ
– VDDQ = 1.7V to 2V for I/O buffers
– VPP = 9V for fast program
• SYCHRONOUS/ASYCHRONOUS READ
– SYCHRONOUS BURST READ mode: 66 MHz
– Asynchronous/synchronous page READ mode
– Random access times: 70ns
• SYCHRONOUS BURST READ SUSPEND
• Programming time
– 10µs by word typical for fast factory program
– Double/quadruple word program option
– Enhanced factory program options
• Memory blocks
– Multiple bank memory array.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M58WR032KB |
Micron |
32Mb Multi Bank Burst Flash memories | |
2 | M58WR032KL |
ST Microelectronics |
Flash memories | |
3 | M58WR032KU |
ST Microelectronics |
Flash memories | |
4 | M58WR032EB |
ST Microelectronics |
Flash Memory | |
5 | M58WR032ET |
ST Microelectronics |
Flash Memory | |
6 | M58WR016KL |
ST Microelectronics |
Flash memories | |
7 | M58WR016KU |
ST Microelectronics |
Flash memories | |
8 | M58WR064B |
STMicroelectronics |
FLASH MEMORY | |
9 | M58WR064EB |
ST Microelectronics |
64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory | |
10 | M58WR064ET |
ST Microelectronics |
64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory | |
11 | M58WR064HB |
ST Microelectronics |
1.8 V supply Flash memories | |
12 | M58WR064HT |
ST Microelectronics |
1.8 V supply Flash memories |