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M58WR016KL |
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| Part Number | M58WR016KL |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | ..... 9 Signal descriptions... . . . . ... |
| Features |
■ Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read – Synchronous Burst Read mode: 86 MHz – Random Access: 60 ns, 70 ns Synchronous Burst Read Suspend Programming time – 10 µs by Word typical for Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options Memory blocks – Multiple Bank memory array: 4 Mbit Banks – Parameter Blocks (top or bottom location) Dual operations – Program Erase in one Bank while Read in others – No dela... |
| Document |
 M58WR016KL Data Sheet
PDF 1.07MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | M58WR016KU |
ST Microelectronics |
Flash memories |
|
| 2 | M58WR032EB |
ST Microelectronics |
Flash Memory |
|
| 3 | M58WR032ET |
ST Microelectronics |
Flash Memory |
|
| 4 | M58WR032KB |
Micron |
32Mb Multi Bank Burst Flash memories |
|
| 5 | M58WR032KL |
ST Microelectronics |
Flash memories |
|