LET21030C - STMicroelectronics

LET21030C RF POWER TRANSISTORS Ldmos Enhanced Technology

The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applic.

Features

emperature Parameter Value 65 -0.5 to +15 4 65 200 -65 to +200 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 2 °C/W January, 24 2003 1/4 LET21030C ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section) Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS
* COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V ID = 20 µA VDS = 26 V VDS = 0 V ID = TBD ID = 1 A ID = 1 A VDD = 26 V VDD = 26 V VDS = 26 V f = 1 MHz f = 1 MHz f = 1 MHz 2 0.29 2 TBD TBD TBD Test Conditions Min. 65 1 1 4.5 0.4 Typ. Max. Unit V µA µA V .