LET20030C - STMicroelectronics

LET20030C RF POWER TRANSISTORS Ldmos Enhanced Technology

The LET20030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20030C is designed for high gain and broadband performance operating in common source mode at 26 V. It is ideal for base station applications requiring high lin.

Features

on Temperature Storage Temperature Parameter Value 65 65 -0.5 to +15 4 65 200 -65 to +200 Unit V V V A W °C °C THERMAL DATA (TCASE = 70 °C) Rth(j-c) Junction -Case Thermal Resistance 2.0 °C/W 1/5 January, 24 2003 LET20030C ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 1 mA VDS = 26 V VDS = 0 V ID = TBD ID = 1 A ID = 1 A VDS = 26 V VDS = 26 V VDS = 26 V f = 1 MHz f = 1 MHz f = 1 MHz 2.5 TBD TBD TBD TBD TBD Min. 65 1 1.