KSD560 - Inchange Semiconductor

KSD560 Silicon NPN Power Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type KSB601 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers and low speed switching applications ABSOLUTE MAXIMUM .

Features

ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS INCHANGE Semiconductor KSD560 MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;, IB=0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA 0.9 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA 1.6 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE=0 1 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 3 mA hFE-1 DC Current Gain IC= 3A ; VCE= 2V 2000 6000 15000 hFE-2 DC Current Gain IC= 5A ; VCE= 2V 500  hFE-1 Classifications .