·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7V IC Co.
O Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 5V fT Current-Gain—Bandwidth Product VECF C-E Diode Forward Voltage tf Fall Time IC= 0.5A; VCE= 10V IF= 2.5A IC= 2A , IB1= 0.6A ; IB2= -1.2A RL= 100Ω; VCC= 200V MIN TYP. MAX UNIT 8.0 V 1.5 V 10 μA 40 130 mA 8 3 MHz 2.0 V 0.4 μs isc website:www.iscsemi.cn 2 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSD5001 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | KSD5001 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor | |
3 | KSD5002 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
4 | KSD5003 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
5 | KSD5003 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor | |
6 | KSD5004 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor | |
7 | KSD5004 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
8 | KSD5005 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
9 | KSD5005 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor | |
10 | KSD5006 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
11 | KSD5007 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
12 | KSD5007 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor |