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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7V IC Co.
lector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 5V fT Current-Gain—Bandwidth Product VECF C-E Diode Forward Voltage tf Fall Time IC= 1A; VCE= 10V IF= 6A IC= 5A , IB1= 1A ; IB2= -2A RL= 40Ω; VCC= 200V MIN TYP. MAX UNIT 5.0 V 1.5 V 10 μA 40 130 mA 8 3 MHz 2.0 V 0.4 μs isc website：www.iscsemi.cn 2 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KSD5000 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | KSD5001 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | KSD5001 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor |
|
| 4 | KSD5002 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | KSD5004 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor |
|
| 6 | KSD5004 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | KSD5005 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | KSD5005 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor |
|
| 9 | KSD5006 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | KSD5007 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 11 | KSD5007 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor |
|
| 12 | KSD5010 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
