·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 5A ·Complement to Type KSB708 APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V .
own Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current hFE-1 DC Current Gain VEB= 5V; IC= 0 IC= 3A; VCE= 1V hFE-2 DC Current Gain IC= 5A; VCE= 1V MIN TYP. MAX UNIT 80 V 0.5 V 1.5 V 10 μA 10 μA 40 200 20 hFE-1 Classifications ROY 40-80 60-120 100-200 isc website:www.iscsemi.cn 2 .
KSD568/569 KSD568/569 Low Frequency Power Amplifier • Low Speed Switching Industrial Use • Complement to KSB707/708 1 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSD560 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | KSD560 |
Fairchild Semiconductor |
Low Frequency Power Amplifier | |
3 | KSD568 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
4 | KSD568 |
Fairchild Semiconductor |
Low Frequency Power Amplifier | |
5 | KSD5000 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | KSD5001 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
7 | KSD5001 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor | |
8 | KSD5002 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
9 | KSD5003 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
10 | KSD5003 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor | |
11 | KSD5004 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor | |
12 | KSD5004 |
Inchange Semiconductor |
Silicon NPN Power Transistor |