KSD560 |
Part Number | KSD560 |
Manufacturer | Inchange Semiconductor |
Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type KSB601 ·Minimum Lot-to-Lot variations for rob... |
Features |
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
INCHANGE Semiconductor
KSD560
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;, IB=0
100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA
0.9
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 3mA
1.6
2.0
V
ICBO
Collector Cutoff Current
VCB= 100V; IE=0
1
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
3
mA
hFE-1
DC Current Gain
IC= 3A ; VCE= 2V
2000 6000 15000
hFE-2
DC Current Gain
IC= 5A ; VCE= 2V
500
hFE-1 Classifications ... |
Document |
KSD560 Data Sheet
PDF 190.92KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSD560 |
Fairchild Semiconductor |
Low Frequency Power Amplifier | |
2 | KSD568 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
3 | KSD568 |
Fairchild Semiconductor |
Low Frequency Power Amplifier | |
4 | KSD569 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
5 | KSD569 |
Fairchild Semiconductor |
Low Frequency Power Amplifier |