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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSD5000 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | KSD5001 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
3 | KSD5001 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor | |
4 | KSD5002 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
5 | KSD5003 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | KSD5003 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor | |
7 | KSD5005 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
8 | KSD5005 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor | |
9 | KSD5006 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
10 | KSD5007 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
11 | KSD5007 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor | |
12 | KSD5010 |
Inchange Semiconductor |
Silicon NPN Power Transistor |